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The fundamental silicon based processing that includes state-of-the- art issues such as thin oxide growth, atomistic diffusion mechanisms, advanced ion implantation and rapid thermal processing (RTP). Physical vapor deposition (PVD) to form conductive and insulating films introduced. Computer simulation tools (i.e. SUPREM) are used to model processes, build device structures, and predict electrical characteristics, which are compared to actual device structures that are fabricated in the associated laboratory for on campus (01) and discussion of laboratory results and a graduate paper for distance learning section (90). A bipolar IC process in conducted to build and test a variety of bipolar devices employing ion implantation. Extensive use of CAE and SUPREM. (0305-701) Class 3, Lab 3, Credit 4 (W)
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